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5.5 ghz to 14 ghz, gaas mmic fundamental mixer data sheet hmc558a rev. 0 document feedback information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062-9106, u.s.a. tel: 781.329.4700 ?2016 analog devices, inc. all rights reserved. technical support www.analog.com features conversion loss: 7.5 db typical at 5.5 ghz to 10 ghz local oscillator (lo) to radio frequency (rf) isolation: 45 db typical at 5.5 ghz to 10 ghz lo to intermediate frequency (if) isolation: 45 db typical at 10 ghz to 14 ghz input third-order intercept (iip3): 21 dbm typical at 10 ghz to 14 ghz input p1db: 11.5 dbm typical at 10 ghz to 14 ghz input second-order intercept (iip2): 55 dbm typical at 10 ghz to 14 ghz passive double-balanced topology wide if bandwidth: dc to 6 ghz 12-lead ceramic leadless chip carrier package applications point to point microwave radios point to multipoint radios military end use instrumentation, automatic test equipment (ate), and sensors functional block diagram rf hmc558a lo if 15000-001 figure 1. general description the hmc558a is a general-purpose, double-balanced mixer in a leadless rohs compliant smt package that can be used as an upconverter or downconverter between 5.5 ghz and 14 ghz. this mixer is fabricated in a gallium arsenide (gaas) metal semi- conductor field effect transistor (mesfet) process, and requires no external components or matching circuitry. the hmc558a provides excellent lo to rf and lo to if isolation due to optimized balun structures, and operates with lo drive levels as low as 9 dbm. the rohs compliant hmc558a eliminates the need for wire bonding, and is compatible with high volume surface-mount manufacturing techniques.
hmc558a data sheet rev. 0 | page 2 of 15 table of contents features .............................................................................................. 1 ? applications ....................................................................................... 1 ? functional block diagram .............................................................. 1 ? general description ......................................................................... 1 ? revision history ............................................................................... 2 ? specifications ..................................................................................... 3 ? absolute maximum ratings ............................................................ 4 ? thermal resistance ...................................................................... 4 ? esd caution .................................................................................. 4 ? pin configuration and function descriptions ............................. 5 ? interface schematics..................................................................... 5 ? typical performance characteristics ............................................. 6 ? downconverter performance ......................................................6 ? upconverter performance ............................................................9 ? return loss and isolation performance .................................. 10 ? spurious performance ............................................................... 12 ? theory of operation ...................................................................... 13 ? applications information .............................................................. 14 ? typical application circuit ....................................................... 14 ? evaluation board information ................................................. 14 ? outline dimensions ....................................................................... 15 ? ordering guide .......................................................................... 15 ? revision history 11/2016revision 0: initial version
data sheet hmc558a rev. 0 | page 3 of 15 specifications lo drive level = 15 dbm , t a = 25 c , if = 100 mhz, upper sideband, u nless otherwise noted . a ll measurem ents performed as a downconverter. table 1 . parameter min typ max unit rf frequency range 5.5 14 ghz lo frequency range 5.5 14 ghz lo drive level 15 dbm if frequency range dc 6 ghz performance at rf = 5.5 ghz to 10 ghz conversion loss 7.5 9.5 db single sideband (ssb) noise figure 7.5 db input third - order intercept (iip3) 15 17.5 dbm input 1 db compression point (ip1db) 10 dbm input second - order intercept (iip2) 50 db rf to if isolation 8 16 db lo to rf isolation 3 5 45 db lo to if isolation 20 35 db performance at rf = 10 ghz to 14 ghz conversion loss 8.5 10 db ssb noise figure 10 db iip3 16 21 dbm ip1db 11.5 dbm iip2 55 db rf to if isolation 10 19 db lo to rf isolation 30 40 db lo to if isolation 20 45 db
hmc558a data sheet rev. 0 | page 4 of 15 absolute maximum ratings table 2. parameter rating rf input power 25 dbm lo input power 25 dbm if input power 25 dbm if source/sink current 3 ma maximum junction temperature 175c continuous p diss (t = 85c) (derate 5.5 mw/c above 85c) 495 mw operating temperature range ?40c to +85c storage temperature range ?65c to +150c lead temperature range (soldering 60 sec) ?65c to +150c electrostatic discharge (esd) sensitivity human body model (hbm) 2500 v (class 2) field induced charged device model (ficdm) 1000 v (class c5) stresses at or above those listed under absolute maximum ratings may cause permanent damage to the product. this is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. operation beyond the maximum operating conditions for extended periods may affect product reliability. thermal resistance thermal performance is directly linked to printed circuit board (pcb) design and operating environment. careful attention to pcb thermal design is required. table 3. thermal resistance package type jc unit e-12-1 1 180 c/w 1 see jedec standard jesd51-2 for addi tional information on optimizing the thermal impedance (pcb with 3 3 vias). esd caution
data sheet hmc558a rev. 0 | page 5 of 15 pin configuration and fu nction descriptions hmc558a top view (not to scale) 9 8 7 gnd rf gnd nic nic nic gnd if gnd 1 2 3 gnd lo gnd 45 6 12 11 10 15000-002 notes 1. nic = no internal connection. 2. exposed pad. connect the exposed pad to a low impedance thermal and electrical ground plane. figure 2. pin configuration table 4. pin function descriptions pin no. mnemonic description 1, 3, 4, 6, 7, 9 gnd ground. see figure 6 for the ground interface schematic. 2 lo local oscillator port. this pin is ac-coupled and matched to 50 . see figure 4 for the lo interface schematic. 5 if dc-coupled if. for applications not requiring operation to dc, dc block this port externally using a series capacitor whose value is chosen to pass the necessary if frequency range. for operation to dc, this pin must not source or sink more than 3 ma of current, or device nonfunction and possible device failure may result. see figure 5 for the if interface schematic. 8 rf rf port. this pin is ac-coupled internally and matc hed to 50 . see figure 3 for the rf interface schematic. 10, 11, 12 nic no internal connection. these pins can be grounded. epad exposed pad. connect the exposed pad to a lo w impedance thermal and electrical ground plane. interface schematics rf 15000-003 figure 3. rf interface lo 15000-00 4 figure 4. lo interface i f 15000-005 figure 5. if interface gnd 15000-006 figure 6. ground interface
hmc558a data sheet rev. 0 | page 6 of 15 typical performance characteristics downconver ter performance data taken as d ownconverter, upper sideband ( low - s ide lo), t a = 25c, lo drive level = 15 dbm unless otherwise specified. C20 C18 C16 C14 C12 C10 C8 C6 C4 C2 0 4 5 6 7 8 9 10 1 1 12 13 14 15 16 conversion gain (db) rf frequenc y (ghz) C4 0 c +2 5 c +8 5 c 15000-107 figure 7. conversion gain vs. rf frequency at various temperatures, if = 100 mhz 0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 4 5 6 7 8 9 10 1 1 12 13 14 15 16 ip3 (dbm) rf frequenc y (ghz) C4 0 c +2 5 c +8 5 c 15000-108 8 3 100 C20 C18 C16 C14 C12 C10 C8 C6 C4 C2 0 6 7 8 9 10 1 1 12 13 14 15 16 conversion gain (db) rf frequenc y (ghz) C4 0 c +2 5 c +8 5 c 15000-109 9 2 C20 C18 C16 C14 C12 C10 C8 C6 C4 C2 0 4 5 6 7 8 9 10 1 1 12 13 14 15 16 conversion gain (db) rf frequenc y (ghz) 9dbm 12dbm 15dbm 18dbm 20dbm 15000- 1 10 10 100 C5.0 C2.5 0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 32.5 4 5 6 7 8 9 10 1 1 12 13 14 15 16 ip3 (dbm) rf frequenc y (ghz) 9dbm 12dbm 15dbm 18dbm 20dbm 15000- 11 1 11 3 100 C20 C18 C16 C14 C12 C10 C8 C6 C4 C2 0 6 7 8 9 10 11 12 13 14 15 16 conversion gain (db) rf frequency (ghz) 9dbm 12dbm 15dbm 18dbm 20dbm 15000-112 12 2
data sheet hmc558a rev. 0 | page 7 of 15 C7.5 C5.0 C2.5 0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 32.5 6 7 8 9 10 1 1 12 13 14 15 16 ip3 (dbm) rf frequenc y (ghz) C4 0 c +2 5 c +8 5 c 15000- 1 13 figure 13 . i nput ip3 vs. rf frequency at various tempera tures, if = 2 ghz C25.0 C22.5 C20.0 C17.5 C15.0 C12.5 C10.0 C7.5 C5.0 C2.5 0 0 1 2 3 4 5 6 7 8 9 conversion gain (db) if frequenc y (ghz) C4 0 c +2 5 c +8 5 c 15000- 1 14 14 C12.5 C10.0 C7.5 C5.0 C2.5 0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 32.5 35.0 6 7 8 9 10 1 1 12 13 14 15 16 ip3 (dbm) rf frequenc y (ghz) 9dbm 12dbm 15dbm 18dbm 20dbm 15000- 1 16 15 3 2 0 5 10 15 20 25 30 35 4 5 6 7 8 9 10 1 1 12 13 14 15 16 p1db (dbm) rf frequenc y (ghz) C4 0 c +2 5 c +8 5 c 15000- 1 17 16 1 100 0 5 10 15 20 25 4 5 6 7 8 9 10 1 1 12 13 14 15 16 noise figure (db) rf frequenc y (ghz) C4 0 c +2 5 c +8 5 c 15000-120 17 100 0 5 10 15 20 25 4 5 6 7 8 9 10 1 1 12 13 14 15 16 noise figure (db) rf frequenc y (ghz) 9dbm 12dbm 15dbm 18dbm 15000-123 18 100
hmc558a data sheet rev. 0 | page 8 of 15 0 10 20 30 40 50 60 70 80 90 4 5 6 7 8 9 10 1 1 12 13 14 15 16 ip2 (dbm) rf frequenc y (ghz) C4 0 c +2 5 c +8 5 c 15000-125 figure 19 . input ip2 vs. rf frequency at various temperatures, if = 100 mhz 0 10 20 30 40 50 60 70 80 90 6 7 8 9 10 1 1 12 13 14 15 16 ip2 (dbm) rf frequenc y (ghz) C4 0 c +2 5 c +8 5 c 15000-126 20 2 2000 0 10 20 30 40 50 60 70 80 90 4 5 6 7 8 9 10 1 1 12 13 14 15 16 ip2 (dbm) rf frequenc y (ghz) 9dbm 12dbm 15dbm 18dbm 20dbm 15000-128 21 2 100 0 10 20 30 40 50 60 70 80 90 6 7 8 9 10 1 1 12 13 14 15 16 ip2 (dbm) rf frequenc y (ghz) 9dbm 12dbm 15dbm 18dbm 20dbm 15000-129 22 2 2000
data sheet hmc558a rev. 0 | page 9 of 15 upconverter performa nce data taken as upconverter, upper sideband, t a = 25c, lo drive level = 15 dbm unless otherwise specified. C20 C18 C16 C14 C12 C10 C8 C6 C4 C2 4 5 6 7 8 9 10 1 1 12 13 14 15 16 conversion gain (db) rf frequenc y (ghz) C40c +25c +85c 15000-030 figure 23 . conversion gain vs. rf frequency for various temperatures, if = 100 mhz C5.0 C2.5 0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 32.5 4 5 6 7 8 9 10 1 1 12 13 14 15 16 ip3 (dbm) rf frequenc y (ghz) C40c +25c +85c 15000-031 24 3 100 C20 C18 C16 C14 C12 C10 C8 C6 C4 C2 0 4 5 6 7 8 9 10 1 1 12 13 14 15 16 conversion gain (db) rf frequenc y (ghz) 12dbm 15dbm 18dbm 20dbm 15000-032 25 100 C5.0 C2.5 0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 32.5 4 5 6 7 8 9 10 1 1 12 13 14 15 16 ip3 (dbm) rf frequency(ghz) 12dbm 15dbm 18dbm 20dbm 15000-033 26 3 100
hmc558a data sheet rev. 0 | page 10 of 15 return l oss and isolation perfor mance data taken at t a = 25c, lo drive level = 15 dbm unless otherwise specified. 0 10 20 30 40 50 60 70 80 4 5 6 7 8 9 10 11 12 13 14 15 16 isolation (db) lo frequency (ghz) C40c +25c +85c 15000-115 lo to rf lo to if figure 27 . lo to rf and lo to if isolation vs. lo frequency at various temperatures, if = 100 mhz 0 5 10 15 20 25 30 35 40 4 5 6 7 8 9 10 1 1 12 13 14 15 16 isol a tion (db) rf frequenc y (ghz) C4 0 c +2 5 c +8 5 c 15000-122 28 100 0 10 20 30 40 50 60 70 80 4 5 6 7 8 9 10 11 12 13 14 15 16 isolation (db) lo frequency (ghz) 9dbm 12dbm 15dbm 18dbm 20dbm 15000-118 lo to rf lo to if fe 29 . lo to rf ad lo to if iolato . lo feec at vao lo poe, if = 100 mhz 0 5 10 15 20 25 30 35 40 4 5 6 7 8 9 10 1 1 12 13 14 15 16 isolation (db) rf frequenc y (ghz) 9dbm 12dbm 15dbm 18dbm 15000- 1 19 figure 30 . rf to if isolation vs. rf frequency at various lo powers, if = 100 mhz
data sheet hmc558a rev. 0 | page 11 of 15 C40 C35 C30 C25 C20 C15 C10 C5 0 5 10 4 5 6 7 8 9 10 1 1 12 13 14 15 16 return loss (db) lo frequenc y (ghz) C4 0 c +2 5 c +8 5 c 15000-121 figure 31 . lo return loss vs . lo frequency at various temperatures C40 C35 C30 C25 C20 C15 C10 C5 0 5 return loss (db) 15000-124 0.1 1.1 2.1 3.1 4.1 5.1 6.1 7.1 8.1 9.1 10.1 if frequenc y (ghz) C40 c +2 5 c +8 5 c fe 32 . if ret lo . if feec at vao temea te , lo poe = 15 dbm , lo feec = 11 ghz C40 C35 C30 C25 C20 C15 C10 C5 0 5 return loss (db) 15000-224 rf frequenc y (ghz) C40 c +2 5 c +8 5 c 4 5 6 7 8 9 10 11 12 13 14 15 16 fe 33 . rf ret lo . rf feec at vao temeate , if = 100 mhz , lo poe = 15 db m
hmc558a data sheet rev. 0 | page 12 of 15 sp urious p erformance m ixer spurious products are measured in dbc from the if output power level. spur values are (m rf) ? (n lo). lower s ideband s elected, if = 100 mhz , rf frequency = 8.1 ghz, rf input power = ?10 dbm, lo frequency = 8.0 ghz, lo drive = 1 5 dbm. nlo 0 1 2 3 4 mrf 0 n/a 1 ?1 24.7 24.4 35.9 1 10.3 0 22.7 34.9 54.3 2 83.6 59 64 58.9 81.9 3 79 84.3 77.8 69.6 75.7 4 76.3 78.4 84.6 85.7 91.3 1 n/a means not applicable.
data sheet hmc558a rev. 0 | page 13 of 15 theory of operation the hmc558a is a general - purpose double balanced mixer in a leadless rohs compliant smt package that can be used as an upconverter or downconverter between 5.5 ghz and 14 ghz. this mixer is fabricated in a gaas mesfet process, and requires no external c omponents or matching circuitry. th e hmc558a provides excellent lo to rf and lo to if isolation due to optimized balun structures and operates with lo drive levels as low as 9 dbm. the rohs compliant hmc558a eliminates the need for wire bonding, and is compatible with high volume surface mount manufacturing techniques.
hmc558a data sheet rev. 0 | page 14 of 15 applications information typical application circuit 9 8 7 1 2 3 45 6 12 11 10 lo rf if 15000-028 figure 34. typical application circuit evaluation board information the circuit board used in an application must use rf circuit design techniques. signal lines must have 50 impedance, and the package ground leads and exposed pad must be connected directly to the ground plane, similarly to that shown in figure 35. use a sufficient number of via holes to connect the top and bottom ground planes. the evaluation circuit board shown in figure 35 is available from analog devices, inc., upon request. j2 j1 j3 u1 if rf lo figure 35. hmc558a evaluation board top layer table 5. bill of materials for the ev1HMC558ALC3B evaluation board level item part number quantity reference designator description 1 1 117611-1 1 pcb, evaluation board 1 2 104935 2 j1 to j2 2.92 mm connector, sri 1 3 105192 1 j3 sma connector, johnson 1 4 HMC558ALC3B 1 u1 device under test (dut)
data sheet hmc558a rev. 0 | page 15 of 15 outline dimensions 05-05-2016-a p kg-004837 0.50 bsc bottom view top view side view seating plane 0.92 max 1 4 6 7 9 10 12 3 for proper connection of the exposed pad, refer to the pin configuration and function descriptions section of this data sheet. 0.36 0.30 0.24 p i n 1 ( 0 . 3 2 0 . 3 2 ) exposed pad pin 1 indicator 3.13 3.00 sq 2.87 2.10 bsc 1.00 ref 1.60 1.50 sq 1.40 figure 36. 12-terminal cerami c leadless chip carrier [lcc] (e-12-1) dimensions shown in millimeters ordering guide model 1 temperature range description package option package body material lead finish msl rating branding HMC558ALC3B ?40c to +85c 12-terminal ceramic leadless chip carrier [lcc] e-12-1 alumina ceramic gold over nickel msl3 h558a xxxx HMC558ALC3Btr ?40c to +85c 12-terminal ceramic leadless chip carrier [lcc] e-12-1 alumina ceramic gold over nickel msl3 h558a xxxx HMC558ALC3Btr-r5 ?40c to +85c 12-terminal ceramic leadless chip carrier [lcc] e-12-1 alumina ceramic gold over nickel msl3 h558a xxxx ev1HMC558ALC3B evaluation pcb assembly 1 z = rohs compliant part. ?2016 analog devices, inc. all rights reserved. trademarks and registered trademarks are the property of their respective owners. d15000-0-11/16(0)

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